High-Quality Bulk β-Ga2O3 and β-(AlxGa1-x)2O3 Crystals: Growth and Properties

被引：16
|
作者：
Bauman, Dmitrii A. [1 ]
Panov, Dmitrii Iu [1 ]
Zakgeim, Dmitrii A. [1 ]
Spiridonov, Vladislav A. [1 ]
Kremleva, Arina, V [1 ]
Petrenko, Artem A. [1 ]
Brunkov, Pavel N. [2 ]
Prasolov, Nikita D. [2 ]
Nashchekin, Alexey, V [2 ]
Smirnov, Andrei M. [1 ]
Odnoblyudov, Maxim A. [1 ]
Bougrov, Vladislav E. [1 ]
Romanov, Alexey E. [1 ]
机构：
[1] ITMO Univ, Inst Adv Data Transfer Syst, Kronverkskii Pr 49, St Petersburg 197101, Russia
[2] Ioffe Inst, Ctr Phys Nanoheterostruct, 26 Politekhn Skaya, St Petersburg 194021, Russia
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2021年 / 218卷 / 20期
基金：
俄罗斯科学基金会;
关键词：
Czochralski method; gallium oxide; power electronics; SINGLE-CRYSTALS; GALLIUM OXIDE; SAPPHIRE; LAYERS;
D O I：
10.1002/pssa.202100335
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A method for the growth of high-quality gallium oxide (beta-Ga2O3) bulk crystals from the melt is developed. The influence of the atmosphere in the process zone on the stability of growth and the quality of Czochralski grown crystals is studied. The structural properties of the crystals obtained are investigated. Samples of gallium oxide substrates are demonstrated. The possibility of growing bulk crystals of solid-solution oxides (AlxGa1-x)(2)O-3 is tested.
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页数：5
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