p-n CHANNEL JUNCTIONLESS TRANSISTOR

被引：0

作者：

Yang, Hui ^{[1
]}

Guo, Yufeng ^{[1
]}

Hong, Yang ^{[1
]}

Yao, Jiafei ^{[1
]}

Zhang, Jun ^{[1
]}

Ji, Xincun ^{[1
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Nanjing 210003, Peoples R China

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a double gate junction less transistor with P-type and N-type doping in vertical direction but laterally uniform doping in the channel that we call the P-N channel double gate junctionless transistor (PN-DG-JLT). The characteristics of PN-DG-JLT were compared with N-channel double gate junctionless transistor using 2-D numerical simulation. The PN-DG-JLT exhibits a favorable subthreshold leakage current and ON to OFF current ratio by controlling doping concentration of channel.

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页数：3

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