Spin transport through quantum dots

被引：1
|
作者：
Lima, ATD [1 ]
Anda, EV [1 ]
机构：
[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22453900 Rio De Janeiro, Brazil
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
quantum dot; magnetic field; polarization;
D O I：
10.1016/S0026-2692(03)00021-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the spin polarized transport properties of a nanoscopic device constituted by a quantum dot connected to two leads. We show that through the manipulation of the gate potential applied to the dot it is possible to control, in a very efficient way, the intensity and polarization of the current that goes along the system. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：337 / 339
页数：3
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