Behavioral modeling of the pH-ISFET temperature influence

被引：3
|
作者：
Haiji, B. [1 ]
Naimi, S. E. [1 ]
Humenyuk, L. [2 ]
Launay, J. [2 ]
Temple-Boyer, P. [2 ]
机构：
[1] Mohammed 1st Univ, ENSA, Dept Elect Engn, Oujda, Morocco
[2] Univ Toulouse, LAAS CNRS, Microdevices & Microsyst Detect Grp, Toulouse, France
来源：
2007 14TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-4 | 2007年
关键词：
D O I：
10.1109/ICECS.2007.4511019
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, behavioral modeling of the temperature influence on the pH-ISFET response has been presented by using Orcad PSPICE simulator and Matlab software. This model was based on the so-called site-binding model and the level 3 of PSPICE model of MOSFET. It takes into account the dependence with temperature of the dissociation constants ka, kb at the SiO2/Si3N4 electrolyte/insulator interface. The implemented model was tested at different temperatures on a large pH range, evidencing a good fit between simulation results and experimental data.
引用
收藏
页码：419 / +
页数：2
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