Behavioral modeling of the pH-ISFET temperature influence

被引：3

作者：

Haiji, B. ^{[1
]}

Naimi, S. E. ^{[1
]}

Humenyuk, L. ^{[2
]}

Launay, J. ^{[2
]}

Temple-Boyer, P. ^{[2
]}

机构：

[1] Mohammed 1st Univ, ENSA, Dept Elect Engn, Oujda, Morocco

[2] Univ Toulouse, LAAS CNRS, Microdevices & Microsyst Detect Grp, Toulouse, France

来源：

2007 14TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-4 | 2007年

关键词：

D O I：

10.1109/ICECS.2007.4511019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, behavioral modeling of the temperature influence on the pH-ISFET response has been presented by using Orcad PSPICE simulator and Matlab software. This model was based on the so-called site-binding model and the level 3 of PSPICE model of MOSFET. It takes into account the dependence with temperature of the dissociation constants ka, kb at the SiO2/Si3N4 electrolyte/insulator interface. The implemented model was tested at different temperatures on a large pH range, evidencing a good fit between simulation results and experimental data.

引用

页码：419 / +

页数：2

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