Thermal considerations for heterojunction bipolar transistors

被引：0

作者：

Dettmer, R ^{[1
]}

Bozada, C ^{[1
]}

Jenkins, T ^{[1
]}

Cerny, C ^{[1
]}

DeSalvo, G ^{[1
]}

Ebel, J ^{[1
]}

Gillespie, J ^{[1
]}

Nakano, K ^{[1
]}

Pettiford, C ^{[1
]}

Quach, T ^{[1
]}

Sewell, J ^{[1
]}

Via, GD ^{[1
]}

Welch, R ^{[1
]}

Anholt, R ^{[1
]}

机构：

[1] USAF, Res Lab, SNDD, Wright Patterson AFB, OH 45433 USA

来源：

COMPOUND SEMICONDUCTOR POWER TRANSISTORS AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIX) | 1998年 / 98卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

An overview of thermal management of heterojunction bipolar transistors (HBTs) is given. The paper includes a description of the self-heating effects observed in HBTs, common thermal management techniques, and the determination of thermal resistance. In addition, results from simulations and experiments concerning the layout and fabrication of HBTs with respect to the thermal properties will be reviewed.

引用

页码：104 / 116

页数：13

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