Improved performance organic thin-film transistors with modified gate insulators

被引：0

作者：

Ling, Chen ^{[1
,2
]}

Qing, Zhu Wen ^{[1
,2
]}

Yu, Bai ^{[1
]}

Xiang, Liu ^{[1
]}

Yin, Jiang Xue ^{[1
]}

Lin, Zhang Zhi ^{[1
,2
]}

机构：

[1] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 201800, Peoples R China

[2] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China

来源：

HDP'07: PROCEEDINGS OF THE 2007 INTERNATIONAL SYMPOSIUM ON HIGH DENSITY PACKAGING AND MICROSYSTEM INTEGRATION | 2007年

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Organic thin film transistors (OTFTs) with modified gate insulator were demonstrated in this paper. The modified gate insulator layers consisted Of SiO2 as the gate insulator and OTS (octadecyltrichlorosilane) or PMMA (Poly(methyl methacylate)) as the modified layer. The devices with the modified layer had field-effect mobility larger than 10(-3) cm(2)/Vs, which was twice than that of the OTFT without modification. The on/off current ratio was increased one order of magnitude and reached more than 10(4). The leakage current was decreased from 10(-9) A to 10(-10) A. The results demonstrate that using modified gate insulators can obviously improve the performance of the OTFTs.

引用

页码：311 / +

页数：2

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