Power Switching Transistors Based on GaN and AlGaN Channels

被引：0

作者：

Bajaj, Sanyam ^{[1
]}

Hung, Ting-Hsiang ^{[1
]}

Akyol, Fatih ^{[1
]}

Krishnamoorthy, Sriram ^{[1
]}

Khandaker, Sadia ^{[1
]}

Armstrong, Andrew ^{[2
]}

Allerman, Andrew ^{[2
]}

Rajan, Siddharth ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS | 2015年

关键词：

GaN MOSHEMT; high composition AlGaN; Al2O3 on AlGaN; enhancement mode; power switching;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate Al2O3/AlGaN interface in GaN MOSHEMTs to engineer channel mobility and threshold voltage suitable for power switching applications. Using oxygen-plasma and annealing treatments, we find the optimal window for high mobility and threshold voltage. Next, we discuss the power switching figure of merit of high composition AlGaN based HEMTs and their potential to achieve large threshold voltages. Finally, we characterize the electrical properties of the interface between Al2O3/high composition Al0.7Ga0.3N, and measure the conduction band offset of approximately 1 eV with a low positive interface fixed charge density of +2.5 x 10(12) cm(-2).

引用

页码：16 / 20

页数：5

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