Effect of annealing on properties and performance of HfO2/SiO2 optical coatings for UV-applications

被引:8
|
作者
Falmbigl, Matthias [1 ]
Godin, Kyle [1 ]
George, Jason [1 ]
Muehlig, Christian [2 ]
Rubin, Binyamin [1 ]
机构
[1] Veeco Instruments Inc, 1 Terminal Dr, Plainview, NY 11803 USA
[2] Fraunhofer Inst Appl Opt & Precis Engn, Albert Einstein Str 7, D-07745 Jena, Germany
来源
OPTICS EXPRESS | 2022年 / 30卷 / 08期
关键词
D O I
10.1364/OE.453345
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The field of ultraviolet (UV)-laser applications is currently experiencing rapid growth in the semiconductor processing, laser micromachining and biomedical markets. Key enablers for these technologies arc optical coatings used to manipulate and guide laser beams in a targeted manner. As laser power, laser fluence and pulse frequencies increase, the demands on the physical properties of the coating materials become more stringent. Ion beam sputtering is a technique that allows producing optical coatings with the low losses required in these applications. In this study, we investigate the influence of ion beam sputtering (IBS) parameters on the optical properties of HfO2 and SiO2 single layers as well as the impact of annealing duration at 475 degrees C for anti-reflective (AR) and highly reflective (HR) optical coatings at 355 nm. For HfO2 sputtered from a metal target the O-2 flow during the coating process is a key parameter to reduce absorption. SiO2 single layers exhibit improved transmission in the UV-range as the ion beam energy for the sputtering process is reduced. Furthermore, a complex behavior for film stress, absorption, surface roughness and coating structure was unraveled as a function of annealing duration for AR- and HR-coatings at 355 nm. The reflectance of the HR-mirror after optimized annealing exceeded 99.94% at 355 nm and a high laser induced damage threshold (LIDT) of 6.9 J/cm(2) was measured after 2 hours of annealing. For the AR-coating a LIDT-value of 15.7 J/cm 2 was observed after 12 hours of annealing. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:12326 / 12336
页数:11
相关论文
共 50 条
  • [31] Preparation of SiO2/HfO2 high reflectors
    Key Laboratory of Advanced Micro-Structure Materials, Department of Physics, Tongji University, Shanghai 200092, China
    不详
    Qiangjiguang Yu Lizishu, 2012, 6 (1276-1280):
  • [32] Modeling HfO2/SiO2/Si interface
    Gavartin, J. L.
    Shluger, A. L.
    MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2412 - 2415
  • [33] Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks
    Zhao, CZ
    Zahid, MB
    Zhang, JF
    Groeseneken, G
    Degraeve, R
    De Gendt, S
    MICROELECTRONIC ENGINEERING, 2005, 80 : 366 - 369
  • [34] Mechanical properties of HfO2/SiO2 thin films on different substrates
    Wang, He
    He, Hongbo
    Zhang, Weili
    Zhongguo Jiguang/Chinese Journal of Lasers, 2013, 40 (07):
  • [35] Influence of dry etching on the properties of SiO2 and HfO2 single layers
    Xie, Lingyun
    Liu, Huasong
    Zhao, Jun
    Jiao, Hongfei
    Zhang, Jinlong
    Wang, Zhanshan
    Cheng, Xinbin
    APPLIED OPTICS, 2020, 59 (05) : A128 - A134
  • [36] Effect of SiO2 protective layer on the femtosecond laser-induced damage of HfO2/SiO2 multilayer high-reflective coatings
    Yuan, Lei
    Zhao, Yuanan
    Wang, Congjuan
    He, Hongbo
    Fan, Zhengxiu
    Shao, Jianda
    APPLIED SURFACE SCIENCE, 2007, 253 (07) : 3450 - 3454
  • [37] HF based solutions for HfO2 removal;: Effect of pH and temperature on HfO2:SiO2 etch selectivity.
    Paraschiv, V
    Claes, M
    Baklanov, MR
    Boullart, W
    De Gendt, S
    Vanhaelemeersch, S
    ULTRA CLEAN PROCESSING OF SILICON SURFACES VII, 2005, 103-104 : 97 - 101
  • [38] Uv-laser ablation of HfO2 dielectric layers on SiO2 for mask preparation
    Rubahn, K
    Ihlemann, J
    ADVANCES IN LASER ABLATION OF MATERIALS, 1998, 526 : 137 - 142
  • [39] Contamination process and laser-induced damage of HfO2/SiO2 coatings in vacuum
    马平
    潘峰
    陈松林
    王震
    胡建平
    张清华
    邵建达
    Chinese Optics Letters, 2009, 7 (07) : 643 - 645
  • [40] Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack
    Wang, Xiaolei
    Han, Kai
    Wang, Wenwu
    Yang, Hong
    Zhang, Jing
    Ma, Xueli
    Xiang, Jinjuan
    Chen, Dapeng
    Ye, Tianchun
    APPLIED PHYSICS LETTERS, 2012, 100 (10)