Electromagnetic modeling of active silicon nanocrystal waveguides

被引:10
|
作者
Redding, Brandon [1 ]
Shi, Shouyuan [1 ]
Creazzo, Tim [1 ]
Prather, Dennis W. [1 ]
机构
[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
来源
OPTICS EXPRESS | 2008年 / 16卷 / 12期
关键词
D O I
10.1364/OE.16.008792
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper we propose an electromagnetic analysis of active silicon nano-crystal (Si-nc) waveguide devices. To account for the nonlinearity in the active medium we introduce a four level rate equation model whose parameters are based on experimentally reported material properties. The electromagnetic polarization serves to couple the quantum mechanical and electromagnetic behavior within the ADE-FDTD scheme. The developed modeling tool is used to simulate waveguide amplifiers, enhanced spontaneous emission microcavities, and the temporal lasing dynamics of active Si-nc based devices. (c) 2008 Optical Society of America.
引用
收藏
页码:8792 / 8799
页数:8
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