Direct Measurement of Potentials in the Reactive Ion-Plasma Etching System

被引:0
|
作者
Abramov, A., V [1 ]
机构
[1] Voronezh State Tech Univ, Voronezh 394006, Russia
关键词
probe diagnostics; low-temperature plasma; plasma potential; floating potential; PROBE;
D O I
10.1134/S1063780X22010019
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Devices for direct measurement of the plasma potential and floating potential in the gas discharge in a reactive ion-plasma etching system are presented. The action of the devices developed for this purpose is based on the creation of a local magnetic field that makes it possible to purposefully change the conditions of ambipolar diffusion of charged particles. This allows the contact of the probe with the body of the positive plasma column without the appearance of floating potential on it. The results of measuring the plasma potential by the proposed and alternative methods are compared.
引用
收藏
页码:69 / 73
页数:5
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