Electroluminescence study of InGaN/GaN QW based p-i-n and inverted p-i-n junction based short-wavelength LED device using laser MBE technique

In the present work, the Laser Molecular Beam Epitaxy (Laser MBE) technique has been used for the fabrication of InGaN/GaN quantum well LEDs. A comparative study was performed for analysing the performance of LEDs with two different device structures i.e conventional (p-GaN/QW/i-GaN/n-GaN/Substrate) and inverted (n-GaN/ QW/i-GaN/p-GaN/Substrate). The fabricated QW based Inverted p-i-n junction and conventional (p-i-n) LEDs exhibited non-linear rectifying current-voltage characteristics with a forward threshold voltage of about 0.7 V and 0.5 V, respectively. Room temperature electroluminescence was observed with increasing injection current in both conventional and inverted junction LED, where LEDs with 5 QW periods showed carrier localization effect and higher external quantum efficiency (EQE) at fixed injection current. The emission in fabricated QW LEDs was found to exhibit a spectral blue shift with increasing injection current. Convention LEDs (topmost layer: p-type GaN) exhibited higher luminous efficiency (i.e., 2.83 lm/W) than the Inverted LEDs (top most layer: n-type GaN) luminous efficiency (i.e., 1.56 lm/W). The efficiency droop observed is 14% in the conventional and 8% in the inverted LED device, respectively. This study focuses on the demonstration of room temperature electroluminescence in InGaN/GaN based LEDs grown using Laser MBE technique. The successful utilization of Laser MBE technique for growth of InGaN/GaN quantum wells can be a revolutionary step towards the establishment of a reliable, cost-effective, and ammonia-free process for fabrication of LED.