Prepassivated AlGaN/GaN HEMTs with improved edge acuity in annealed ohmic contacts

被引：1

作者：

Lee, M. ^{[1
]}

Ryoo, Y. ^{[1
]}

Lee, J. -G. ^{[2
]}

Cha, H. -Y. ^{[2
]}

Seo, K. ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Elect Engn & Comp Sci, Seoul, South Korea

[2] Hongik Univ, Sch Elect & Elect Engn, Seoul, South Korea

来源：

ELECTRONICS LETTERS | 2011年 / 47卷 / 12期

关键词：

D O I：

10.1049/el.2011.1190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sharp edge definition of annealed ohmic contacts is of great concern in AlGaN/GaN high electron mobility transistors (HEMTs) because it is strongly associated with breakdown voltage uniformity and reliability. In this reported work, two-step sequential annealing in conjunction with a low-damage SiN(x) dry etching technique was employed in a pre-passivation process in order to improve the edge acuity in annealed ohmic contacts. As a result, uniformity in breakdown voltage was significantly improved in comparison with a conventional process.

引用

页码：725 / 726

页数：2

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