Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

被引：47
|
作者：
Yang, Zhi-Guo [1 ]
Zhu, Li-Ping [1 ]
Guo, Yan-Min [1 ]
Tian, Wei [1 ]
Ye, Zhi-Zhen [1 ]
Zhao, Bing-Hui [1 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
PHYSICS LETTERS A | 2011年 / 375卷 / 16期
基金：
中国国家自然科学基金;
关键词：
Valence-band offset; X-ray photoelectron spectroscopy; NiO/ZnO heterojunction; LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; FABRICATION; EMISSION; FILMS;
D O I：
10.1016/j.physleta.2011.03.021
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
X-ray photoelectron spectroscopy was used to measure the valence-band offset (VBO) of the NiO/ZnO heterojunction grown on quartz substrate by radio frequency (RF) magnetron sputtering. Core levels of Ni 2p and Zn 2p were used to align the VBO of p-NiO/n-ZnO heterojunction. The valence-band offset (Delta Ev) is determined to be 1.47 eV. According to the band gap of 3.7 eV for NiO and 3.37 eV for ZnO, the conduction-band offset (Delta E-C) in the structure was calculated to be 1.8 eV, and it has a type-II band alignment. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1760 / 1763
页数：4
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