Perturbation method for dielectric constant measurement of thick-film dielectric materials at microwave frequencies

被引：3
|
作者：
Li, D
Free, CE
Pitt, KEG
Barnwell, PG
机构：
[1] Middlesex Univ, London N11 2NQ, England
[2] Heraeus Inc, Cermalloy Div, W Conshohocken, PA 19428 USA
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 21期
关键词：
D O I：
10.1049/el:19981392
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel technique, using a cavity perturbation method, for measuring the relative permittivity of dielectric thick-film materials is presented. Measurement data have been obtained at X-band frequencies for two kinds of dielectric thick-film material. The method combines simplicity with high accuracy and has the potential to measure films as thin as 20 mu m.
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页码：2042 / 2044
页数：3
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