MICROSTRUCTURES AND CARRIER TRANSPORT BEHAVIORS OF NANOCRYSTALLINE SILICON THIN FILMS

被引：0

作者：

Shan, Dan ^{[1
,2
,3
]}

Xu, Jie ^{[1
,2
]}

Lu, Peng ^{[1
,2
]}

Xu, Jun ^{[1
,2
]}

Chen, Kunji ^{[1
,2
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[3] Yangzhou Polytech Inst, Sch Elect & Informat Engn, Yangzhou 225127, Jiangsu, Peoples R China

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

OPTICAL-ABSORPTION EDGE; MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenated amorphous Si thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed above 80 degrees C. to obtain nanocrystalline Si and the microstructures and carrier transport behaviors were evaluated. It was found that the crystallization of amorphous silicon can be improved by increasing the annealing temperature. Temperature-dependent Hall measurements were performed and the Hall mobility of the thermally annealed sample is 0.86 cm(2)/V.s, which is one order magnitude larger than that of as-deposited amorphous Si film. The nanocrystalline Si films exhibit a thermally activated electrical transport above room temperature.

引用

页数：3

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