Self-Cascode Active Inductor in 65nm Bulk CMOS For Low Power RF Oscillator

被引:0
|
作者
Meharde, Priya [1 ]
Niranjan, Vandana [1 ]
Kumar, Ashwni [1 ]
机构
[1] Indira Gandhi Delhi Tech Univ Women, Dept Elect & Commun, New Delhi, India
关键词
active inductor; 65nm; self-cascode; LC oscillator; RF;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
This paper shows an effective and novel implementation of the self-cascode technique in the design of a CMOS active inductor in 65nm CMOS bulk technology with a triple-well process. The current operated active inductor operates at a self-resonant frequency of 0.447 GHz at a relatively low bias current (less than 150 uA) drawn from a 1.2 V voltage supply. The design methodology of the self-cascode CMOS active inductor is investigated and discussed. A low voltage, differential output LC oscillator is designed using the proposed self-cascode active inductor to assess the feasibility of the latter in RF and microwave circuits. The operation of the circuits proposed in this paper is verified using Cadence simulation tools.
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页数:5
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