Improving the oxidation resistance of TiAl-based alloy by siliconizing

被引：57
|
作者：
Liang, W [1 ]
Zhao, XG [1 ]
机构：
[1] Taiyuan Univ Technol, Ctr Testing & Measuring, Taiyuan 030024, Peoples R China
来源：
SCRIPTA MATERIALIA | 2001年 / 44卷 / 07期
关键词：
intermetallic compounds; oxidation; siliconizing; TEM; SEM;
D O I：
10.1016/S1359-6462(01)00675-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The oxidation resistance of TiAl-base alloy was attempted to increase via siliconizing. Siliconizing at 1250 degrees Celsius remarkably improved the oxidation resistance of the sample alloy. A Ti5Si3 surface layer was formed after siliconizing where a Ti-rich transition layer existed. The siliconized layer was very adherent to the substrated and neither cracked now spalled during the oxidation.
引用
收藏
页码：1049 / 1054
页数：6
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