Anisotropic wet-chemical etching for preparation of freestanding films on Si substrates for atom probe tomography: A simple yet effective approach

被引:2
|
作者
Tkadletz, Michael [1 ]
Lechner, Alexandra [2 ]
Poelzl, Silvia [1 ]
Schalk, Nina [1 ]
机构
[1] Mt Univ Leoben, Dept Mat Sci, Franz Josef Str 18, A-8700 Leoben, Austria
[2] Mat Ctr Leoben Forsch GmbH, Roseggerstr 12, A-8700 Leoben, Austria
关键词
Atom probe tomography (APT); APT preparation; Lift-out process; Wedge method; Anisotropic wet-chemical echting; Coatings; Thin films; SPECIMEN PREPARATION; FABRICATION; COATINGS; SILICON;
D O I
10.1016/j.ultramic.2021.113402
中图分类号
TH742 [显微镜];
学科分类号
摘要
A major drawback of atom probe tomography (APT) experiments of complex samples is the demanding and rather time consuming specimen preparation via the lift-out process. It usually requires a skilled operator for focused ion beam (FIB) preparation, and frequently overbooked FIB workstations represent a major bottleneck in sample throughput. Within this work, the authors present an alternative approach for APT specimen preparation of functional films and coatings on Si substrates via anisotropic wet-chemical etching. Utilizing this simple, yet effective approach, a freestanding section of the film to be investigated can be fabricated in a few steps. After the etching procedure, freestanding film posts and subsequently APT specimen can be easily prepared by basic FIB milling operations without the need for a lift-out process. Hence, this approach reduces FIB efforts to a minimum in terms of complexity and required machine utilization.
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页数:4
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