Performance of a DC GaAs photocathode gun for the jefferson lab FEL

被引：49
|
作者：
Siggins, T
Sinclair, C
Bohn, C
Bullard, D
Douglas, D
Grippo, A
Gubeli, J
Krafft, GA
Yunn, B
机构：
[1] Thomas Jefferson Natl Accelerator Facil, Newport News, VA 23606 USA
[2] Fermilab Natl Accelerator Lab, Batavia, IL 60510 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 475卷 / 1-3期
关键词：
photocathode; FEL; emittance;
D O I：
10.1016/S0168-9002(01)01596-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The performance of the 320 kV DC photocathode gun has met the design specifications for the I kW IR Demo FEL at Jefferson Lab. This gun has shown the ability to deliver high average current beam with outstanding lifetimes. The GaAs photocathode has delivered 135 pC per bunch, at a bunch repetition rate of 37.425 MHz, corresponding to 5 mA average CW current. In a recent cathode lifetime measurement, 20 h of CW beam was delivered with an average current of 3.1 mA and 211 C of total charge from a 0.283 cm(2) illuminated spot. The cathode showed a Ile lifetime of 58 h and a 1/e extracted charge lifetime of 618 C. We have achieved quantum efficiencies of 5% from a GaAs wafer that has been in service for 13 months delivering in excess 2400 C with only three activation cycles. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：549 / 553
页数：5
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