Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors

被引：31

作者：

Lin, Youxi ^{[1
]}

Donetsky, Dmitry ^{[1
]}

Wang, Ding ^{[1
]}

Westerfeld, David ^{[1
]}

Kipshidze, Gela ^{[1
]}

Shterengas, Leon ^{[1
]}

Sarney, Wendy L. ^{[2
]}

Svensson, Stefan P. ^{[2
]}

Belenky, Gregory ^{[1
]}

机构：

[1] SUNY Stony Brook, Dept ECE, Stony Brook, NY 11794 USA

[2] US Army, Res Lab, Adelphi, MD 20783 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 10期

基金：

美国国家科学基金会;

关键词：

InAsSb; energy gap bowing; long-wave infrared; barrier photodetector; BEAM EPITAXIAL-GROWTH; SUPERLATTICES; INAS1-XSBX; INSB;

D O I：

10.1007/s11664-015-3892-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% were grown on compositionally graded GaInSb and AlInSb buffers on GaSb substrates by molecular beam epitaxy. The minimum energy gap for these materials at T = 77 K was estimated to be 90 meV. Benchmark material parameters were measured for barrier photodetector heterostructures with 1-mu m-thick InAs0.6Sb0.4 absorbers. A minority hole lifetime of 185 ns and a diffusion length of 9 mu m at T = 77 K were determined from the transient response of barrier heterostructures. The data imply a hole mobility of 10(3) cm(2)/Vs, which was confirmed with frequency response measurements. A 100-mu m square mesa contact nBn heterostructure demonstrated a -3 dB frequency response bandwidth of 50 MHz.

引用

页码：3360 / 3366

页数：7

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