High-speed Avalanche Photodiodes based on III-V Compounds for Optical Communications

被引：0

作者：

Nada, Masahiro ^{[1
]}

Nakajima, Fumito ^{[2
]}

Yoshimatsu, Toshihide ^{[1
]}

Matsuzaki, Hideaki ^{[2
]}

Sano, Kimikazu ^{[1
]}

机构：

[1] NTT Corp, NTT Device Innovat Ctr, Atsugi, Kanagawa, Japan

[2] NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa, Japan

来源：

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年

关键词：

Avalanche photodiode; high speed; Optical communications systems;

D O I：

10.1109/iciprm.2019.8819133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Avalanche photodiodes based on III-V-compounds feature flexibility in designing bandwidth, gain, responsivity, and linearity, which are associated with not only the thickness of each layer but also doping profiles and material options and their combinations. Here, we review the design and performance of our high-speed avalanche photodiodes that feature a unique epitaxial layer structure. Even though the APDs have a vertical illumination structure, which is essential for easy optical coupling and fabrication, their speed is high enough for operation with 100G-PAM4. We also discuss our efforts for improving linearity, which is important for operation with higher-order modulation format.

引用

页数：2

共 50 条

[21] Superlattice avalanche photodiodes for optical communications
Taguchi, K
Makita, K
Watanabe, I
Tsuji, M
Hayashi, M
Nakata, T
OPTICAL AND QUANTUM ELECTRONICS, 1998, 30 (04) : 219 - 238
[22] A review on III-V compound semiconductor short wave infrared avalanche photodiodes
Liang, Yan
Perumalveeramalai, Chandrasekar
Lin, Guochen
Su, Xiangbin
Zhang, Xiaoming
Feng, Shuai
Xu, Yingqiang
Li, Chuanbo
NANOTECHNOLOGY, 2022, 33 (22)
[23] Impact-ionization and noise characteristics of thin III-V avalanche photodiodes
Saleh, MA
Hayat, MM
Sotirelis, PP
Holmes, AL
Campbell, JC
Saleh, BEA
Teich, MC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (12) : 2722 - 2731
[24] HIGH-SPEED SILICON AVALANCHE PHOTODIODES WITH BUILT-IN FIELD
KANBE, H
MIZUSHIMA, Y
KIMURA, T
KAJIYAMA, K
JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3749 - 3751
[25] Sensitivity of high-speed receivers using InAlAs avalanche photodiodes
Hayat, Majeed M.
Ong, Daniel S. G.
David, John P. R.
Ng, Jo Shien
2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY, 2010, : 126 - +
[26] HIGH-SPEED DISTRIBUTED FEEDBACK LASERS AND INGAAS AVALANCHE PHOTODIODES
IMAI, H
KANEDA, T
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (11) : 1634 - 1642
[27] High-Speed Avalanche Photodiodes With Wide Dynamic Range Performance
Zhao, Hao-Yi
Naseem
Jones, Andrew H.
Chao, Rui-Lin
Ahmad, Zohauddin
Campbell, Joe C.
Shi, Jin-Wei
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2019, 37 (23) : 5945 - 5952
[28] High-speed resonant-cavity SAM avalanche photodiodes
Nie, H
Anselm, KA
Hu, C
Lenox, C
Streetman, BG
Campbell, JC
55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997, 1997, : 166 - 167
[29] Low-frequency noise in III-V high-speed devices
Pénarier, A
Jarrix, SG
Delseny, C
Pascal, F
Vildeuil, JC
Valenza, M
Rigaud, D
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2002, 149 (01): : 59 - 67
[30] High-speed III-V nanowire photodetector monolithically integrated on Si
Mauthe, Svenja
Baumgartner, Yannick
Sousa, Marilyne
Ding, Qian
Rossell, Marta D.
Schenk, Andreas
Czornomaz, Lukas
Moselund, Kirsten E.
NATURE COMMUNICATIONS, 2020, 11 (01)

← 1 2 3 4 5 →