Atomistic switch of giant magnetoresistance and spin thermopower in graphene-like nanoribbons

被引:8
|
作者
Zhai, Ming-Xing [1 ,2 ]
Wang, Xue-Feng [1 ,3 ]
机构
[1] Soochow Univ, Coll Phys Optoelect & Energy, Jiangsu Key Lab Thin Films, 1 Shizi St, Suzhou 215006, Peoples R China
[2] Hongzhiwei Technol Co Ltd, 1888 Xinjinqiao Rd, Shanghai 201206, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, 865 Changning Rd, Shanghai 200050, Peoples R China
来源
SCIENTIFIC REPORTS | 2016年 / 6卷
基金
中国国家自然科学基金;
关键词
TRANSPORT; MANIPULATION;
D O I
10.1038/srep36762
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We demonstrate that the giant magnetoresistance can be switched off (on) in even-(odd-) width zigzag graphene-like nanoribbons by an atomistic gate potential or edge disorder inside the domain wall in the antiparallel (ap) magnetic configuration. A strong magneto-thermopower effect is also predicted that the spin thermopower can be greatly enhanced in the ap configuration while the charge thermopower remains low. The results extracted from the tight-binding model agree well with those obtained by first-principles simulations for edge doped graphene nanoribbons. Analytical expressions in the simplest case are obtained to facilitate qualitative analyses in general contexts.
引用
收藏
页数:7
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