Fracture strength of micro- and nano-scale silicon components
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作者:
DelRio, Frank W.
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NIST, Appl Chem & Mat Div, Mat Measurement Lab, Boulder, CO 80305 USANIST, Appl Chem & Mat Div, Mat Measurement Lab, Boulder, CO 80305 USA
DelRio, Frank W.
[1
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Cook, Robert F.
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NIST, Mat Measurement Sci Div, Mat Measurement Lab, Gaithersburg, MD 20899 USANIST, Appl Chem & Mat Div, Mat Measurement Lab, Boulder, CO 80305 USA
Cook, Robert F.
[2
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Boyce, Brad L.
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Sandia Natl Labs, Ctr Mat Sci & Engn, Albuquerque, NM 87185 USANIST, Appl Chem & Mat Div, Mat Measurement Lab, Boulder, CO 80305 USA
Boyce, Brad L.
[3
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机构:
[1] NIST, Appl Chem & Mat Div, Mat Measurement Lab, Boulder, CO 80305 USA
[2] NIST, Mat Measurement Sci Div, Mat Measurement Lab, Gaithersburg, MD 20899 USA
[3] Sandia Natl Labs, Ctr Mat Sci & Engn, Albuquerque, NM 87185 USA
Silicon devices are ubiquitous in many micro-and nano-scale technological applications, most notably microelectronics and microelectromechanical systems (MEMS). Despite their widespread usage, however, issues related to uncertain mechanical reliability remain a major factor inhibiting the further advancement of device commercialization. In particular, reliability issues related to the fracture of MEMS components have become increasingly important given continued reductions in critical feature sizes coupled with recent escalations in both MEMS device actuation forces and harsh usage conditions. In this review, the fracture strength of micro-and nano-scale silicon components in the context of MEMS is considered. An overview of the crystal structure and elastic and fracture properties of both single-crystal silicon (SCS) and polycrystalline silicon (polysilicon) is presented. Experimental methods for the deposition of SCS and polysilicon films, fabrication of fracture-strength test components, and analysis of strength data are also summarized. SCS and polysilicon fracture strength results as a function of processing conditions, component size and geometry, and test temperature, environment, and loading rate are then surveyed and analyzed to form overarching processing-structure-property-performance relationships. Future studies are suggested to advance our current view of these relationships and their impacts on the manufacturing yield, device performance, and operational reliability of micro-and nano-scale silicon devices.
机构:
Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136701, South KoreaKorea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136701, South Korea
Jun, Yesl
Kang, Edward
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Korea Univ, Coll Hlth Sci, Dept Biomed Engn, Seoul 136703, South Korea
Korea Univ, Sch Med, Dept Med, Seoul 136713, South KoreaKorea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136701, South Korea
Kang, Edward
Chae, Sukyoung
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MIT, Harvard Mit Div Hlth Sci & Technol, Cambridge, MA 02139 USAKorea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136701, South Korea
Chae, Sukyoung
Lee, Sang-Hoon
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Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136701, South Korea
Korea Univ, Coll Hlth Sci, Dept Biomed Engn, Seoul 136703, South KoreaKorea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136701, South Korea
机构:
Sungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Sch Chem Engn, Suwon 440746, South KoreaSungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Sch Chem Engn, Suwon 440746, South Korea
Oleksandrov, Sergiy
Lee, Jungwoo
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Sungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Sch Chem Engn, Suwon 440746, South KoreaSungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Sch Chem Engn, Suwon 440746, South Korea
Lee, Jungwoo
Lee, Sumi
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Samsung Elect Co, LCD Technol Ctr, Yongin 446711, South KoreaSungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Sch Chem Engn, Suwon 440746, South Korea
Lee, Sumi
Lee, Moon-Gyu
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Samsung Elect Co, LCD Technol Ctr, Yongin 446711, South KoreaSungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Sch Chem Engn, Suwon 440746, South Korea
Lee, Moon-Gyu
Choi, Hwan Young
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Samsung Elect Co, LCD Technol Ctr, Yongin 446711, South KoreaSungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Sch Chem Engn, Suwon 440746, South Korea
Choi, Hwan Young
Chung, Chan-Hwa
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Sungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Sch Chem Engn, Suwon 440746, South KoreaSungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Sch Chem Engn, Suwon 440746, South Korea