Impacts of channel implantation on performance of static shielding diodes and static induction rectifiers

SSDs and SI rectifiers were fabricated controlling the channel dosage with ion implantation processes, and impacts of the channel dosage on the performance of these rectifiers have been investigated. It has been made clear that the reverse recovery times of these rectifiers are improved by decreasing the channel dosage without increasing the forward voltage drop. This is because the decrease of the channel dosage enhances the electron current flowing through the channel, while it reduces the amount of the holes injected from the anode electrode. Although the recovery times of the SI rectifiers are smaller than those of the SSDs, the blocking voltages of the SI rectifiers are smaller than those of the SSD at the low channel dosages. This result suggests that, for the SI rectifier, depth of the anode n(+) region must be shallow enough to suppress the punchthrough breakdown.