Dependence of transient performance on potential distribution in a static induction thyristor channel

被引：3
|
作者：
刘春娟 [1 ]
刘肃 [1 ]
白雅洁 [1 ]
机构：
[1] Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China
来源：
半导体学报 | 2012年 / 33卷 / 04期
关键词：
static induction thyristor; potential barrier; transient performance; blocking state; conducting state;
D O I：
暂无
中图分类号：
TN34 [晶闸管（可控硅）];
学科分类号：
摘要：
The impact of potential barrier distribution on the transient performance of a static induction thyristor (SITH) in a channel determined by geometrical parameters and applied bias voltage is studied theoretically and experimentally.The analytical expressions of potential barrier height and the I-V characteristics of the SITH are also derived.The main factors that influence the transient performance of the SITH between the blocking and conducting states,as well as the mechanism underlying the transient process,is thoroughly investigated.This is useful in designing,fabricating,optimizing and applying SITHs properly.
引用
收藏
页码：69 / 74
页数：6
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