Computing with Injection-Locked Spintronic Diodes

被引:9
|
作者
Mazza, Luciano [1 ]
Puliafito, Vito [1 ]
Raimondo, Eleonora [2 ]
Giordano, Anna [3 ]
Zeng, Zhongming [4 ]
Carpentieri, Mario [1 ]
Finocchio, Giovanni [2 ]
机构
[1] Politecn Bari, Dept Elect & Informat Engn, Via Orabona 4, I-70125 Bari, Italy
[2] Univ Messina, Dept Math & Comp Sci Phys Sci & Earth Sci, I-98166 Messina, Italy
[3] Univ Messina, Dept Engn, Cda Di Dio, I-98166 Messina, Italy
[4] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Ruoshui Rd 398, Suzhou 215123, Peoples R China
关键词
This work is supported by Grant No. 2019-1-U.0 (Diodi spintronici rad-hard ad elevate sensitività – DIOSPIN) funded by the Italian Space Agency (ASI) within the call Nuove idee per la componentistica spaziale del futuro; PON R&I 2014-2020 Project No. ARS01_01215 (New satellites generation components – NSG) funded by the Italian Ministry of University and Research; and Project No. PRIN 2020LWPKH7 funded by the Italian Ministry of University and Research. The work is also supported by the Petaspin Association . The authors thank Caterina Ciminelli for fruitful discussions;
D O I
10.1103/PhysRevApplied.17.014045
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spintronic diodes (STDs) are emerging as a technology for the realization of high-performance microwave detectors. The key advantages of such devices are their high sensitivity, capability to work at low input power, and compactness. In this work, we show a possible use of STDs for neuromorphic computing to expand the realm of their functionalities for the implementation of analog multiplication, which is a key operation in convolutional neural networks (CNNs). In particular, we introduce the concept of degree of rectification (DOR) in injection-locked STDs. Micromagnetic simulations are used to design and identify the working range of the STDs for the implementation of the DOR. Previous experimental data confirm the applicability of the proposed solution, which is tested in image processing and in a CNN that recognizes handwritten digits.
引用
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页数:10
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