Integration of spin valves and GaAs diodes in magnetoresistive random access memory cells

被引：5

作者：

Boeve, H ^{[1
]}

Das, J ^{[1
]}

Bruynseraede, C ^{[1
]}

De Boeck, J ^{[1
]}

Borghs, G ^{[1
]}

机构：

[1] IMEC, Louvain, Belgium

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.370479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A magnetoresistive random access memory, based on a dynamic random access memory-like floor plan, is demonstrated for an array of magnetic memory cells. Each memory cell consists of a giant magnetoresistive spin-valve structure in series with a GaAs diode. Any single bit in the matrix can be addressed using a coincident current scheme, both for write and read operations. The integration of a series diode in the memory cell yields, for this first demonstrator, read signals of approximately 10 mV. (C) 1999 American Institute of Physics. [S0021-8979(99)30208-5].

引用

页码：4779 / 4781

页数：3

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