Tunable optical and electronic properties of gallium telluride monolayer for photovoltaic absorbers and ultraviolet detectors

被引：58

作者：

Al-Abbas, Shurooq Sabah Abed ^{[1
]}

Muhsin, Musa Kadhim ^{[2
]}

Jappor, Hamad Rahman ^{[1
]}

机构：

[1] Univ Babylon, Coll Educ Pure Sci, Dept Phys, Hilla, Iraq

[2] Univ Babylon, Coll Sci, Dept Phys, Hilla, Iraq

来源：

CHEMICAL PHYSICS LETTERS | 2018年 / 713卷

关键词：

Gallium telluride monolayer; Optical properties; UV detector; 1ST PRINCIPLES; WORK FUNCTION; GATE; GAS; GRAPHENE; ANISOTROPY; SILICENE; GROWTH;

D O I：

10.1016/j.cplett.2018.10.020

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

First-principles calculations have been utilized to investigate the electronic and optical properties of GaTe monolayer. The GaTe single-layer reveals a proper bandgap and suitable optical properties that not observed in the other layered materials, including absorption coefficient larger than 10(4) cm(-1) at the visible light range. Combining the electronic and optical properties, GaTe monolayer has a great possibility to be used as ultraviolet detectors and photovoltaic absorbers. Accordingly, our results suggest significant guidelines for the design of optoelectronic devices that made of layered GaTe. The present work provides useful guidance for further expanding the practical application range of GaTe materials.

引用

页码：46 / 51

页数：6

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