Linearization of RF CMOS Power Amplifiers

被引：0
|
作者：
Jeong, Gwanghyeon [1 ]
Koo, Bonhoon [1 ]
Joo, Taehwan [1 ]
Hong, Songcheol [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Daejeon 305701, South Korea
来源：
2015 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2015年
关键词：
CMOS Power Amplifier(PA); linearization; WCDMA; WLAN; 802.11g; third-order intermodulation distortion (IMD3); EVM; ACLR; ACLR asymmetry; IPD; envelope injection; large-signal multi-gated transistors (LS-MGTR); adaptive power cell (APC); AM-AM distortion; AM-PM distortion;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents two kinds of linearization techniquesfcr RF CMOS Power Amplifiers(PAs). One is the linearization technique using adaptively controlled biases d Common Source(CS) and Common Gate (CG) amplifier in a cascode structure The others are the power-cell linearization techniques such as large signal multi-gated transistor (LS-MGTR) d a CS amplifier and adaptive power cell (APC) of CG amplifier.
引用
收藏
页码：154 / 156
页数：3
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