Phase Change Memory

被引：1387

作者：

Wong, H. -S. Philip ^{[1
]}

Raoux, Simone ^{[2
]}

Kim, SangBum ^{[1
]}

Liang, Jiale ^{[1
]}

Reifenberg, John P. ^{[3
]}

Rajendran, Bipin ^{[2
]}

Asheghi, Mehdi ^{[4
]}

Goodson, Kenneth E. ^{[4
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] Intel Corp, Santa Clara, CA 95054 USA

[4] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

来源：

PROCEEDINGS OF THE IEEE | 2010年 / 98卷 / 12期

基金：

美国国家科学基金会;

关键词：

Chalcogenides; emerging memory; heat conduction; nonvolatile memory; PCRAM; phase change material; phase change memory (PCM); PRAM; thermal physics; RANDOM-ACCESS MEMORY; INTRINSIC DATA RETENTION; COMPACT THERMAL-MODEL; MULTILEVEL STORAGE; CELL OPTIMIZATION; READ PERFORMANCE; HIGH-SPEED; PART II; CRYSTALLIZATION; RESISTANCE;

D O I：

10.1109/JPROC.2010.2070050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.

引用

页码：2201 / 2227

页数：27

共 50 条

[41] Phase Change Materials for Multi-level Storage Phase Change Memory
Ren, Kun
Rao, Feng
Song, Zhitang
Zhu, Min
Gong, Yuefeng
Wu, Liangcai
Liu, Bo
Feng, Songlin
2012 INTERNATIONAL WORKSHOP ON INFORMATION STORAGE AND NINTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE, 2013, 8782
[42] Phase Change Memory Line Concept for Embedded Memory Applications
Attenborough, K.
Hurkx, G. A. M.
Delhougne, R.
Perez, J.
Wang, M. T.
Ong, T. C.
Tran, Luan
Roy, D.
Gravesteijn, D. J.
van Duuren, M. J.
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010,
[43] Write-Once-Memory-Code Phase Change Memory
Li, Jiayin
Mohanram, Kartik
2014 DESIGN, AUTOMATION AND TEST IN EUROPE CONFERENCE AND EXHIBITION (DATE), 2014,
[44] Cell design considerations for phase change memory as a universal memory
Lam, Chung
2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM, 2008, : 132 - 133
[45] Phase Change Memory: A new memory enables new memory usage models
Eilert, Sean
Leinwander, Mark
Crisenza, Giuseppe
2009 IEEE INTERNATIONAL MEMORY WORKSHOP, 2009, : 72 - 73
[46] Programming characteristics of phase change random access memory using phase change simulations
Kim, YT
Hwang, YN
Lee, KH
Lee, SH
Jeong, CW
Ahn, SJ
Yeung, F
Koh, GH
Jeong, HS
Chung, WY
Kim, TK
Park, YK
Kim, KN
Kong, JT
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2701 - 2705
[47] Transient phase change effect during the crystallization process in phase change memory devices
Yeo, E. G.
Zhao, R.
Shi, L. P.
Lim, K. G.
Chong, T. C.
Adesida, I.
APPLIED PHYSICS LETTERS, 2009, 94 (24)
[48] Programming characteristics of phase change random access memory using phase change simulations
Kim, Young-Tae
Hwang, Young-Nam
Lee, Keun-Ho
Lee, Se-Ho
Jeong, Chang-Wook
Ahn, Su-Jin
Yeung, Fai
Koh, Gwan-Hyeob
Jeong, Heong-Sik
Chung, Won-Young
Kim, Tai-Kyung
Park, Young-Kwan
Kim, Ki-Nam
Kong, Jeong-Taek
1600, Japan Society of Applied Physics (44):
[49] Multiple phase change structure for the scalable phase change random access memory array
Lee, Jung-Min
Saito, Yuta
Sutou, Yuji
Koike, Junichi
Jung, Jin Won
Sahashi, Masashi
Song, Yun-Heub
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
[50] Phase transition characteristics of Al-Sb phase change materials for phase change memory application
Zhou, Xilin
Wu, Liangcai
Song, Zhitang
Rao, Feng
Ren, Kun
Peng, Cheng
Song, Sannian
Liu, Bo
Xu, Ling
Feng, Songlin
APPLIED PHYSICS LETTERS, 2013, 103 (07)

← 1 2 3 4 5 →