Influence of gamma-ray and neutron irradiation on injection characteristics of 4H-SiC pn structures

被引：8
|
作者：
Strel'chuk, AM
Kalinina, EV
Konstantinov, AO
Hallen, A
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] ACREO, SE-16440 Kista, Sweden
[3] Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
gamma-ray and neutron irradiation; recombination; lifetime; 4H-SiC; RECOMBINATION; JUNCTION;
D O I：
10.4028/www.scientific.net/MSF.483-485.993
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of gamma-ray and neutron irradiation on recombination current, injection electroluminescense and the value of the lifetime of nonequilibrium carriers for 4H-SiC pn structures was investigated. The irradiation was carried out with gamma-ray (dose 5x10(6) rad) and 1 MeV neutrons in the doses range from 1.2x10(14) cm(-2) to 6.24x10(14) cm(-2). Neutron irradiation with a dose 1.2x10(14) cm(-2) increased the recombination current, decreased the lifetime for deep-level recombination in the space charge region and decreased the intensity of the edge injection electroluminescense (hv(max) approximate to 3.16 eV) by 1.5-2 orders of magnitude; the neutron irradiation with high dose (6.24x10(14) cm(-2)) resulted in increase of the recombination current up to 2 orders of magnitude and decrease of lifetime at least up to 2 orders of magnitude. Gamma-ray irradiation and annealing at temperatures in the range 350-650 K left the recombination current and lifetime practically unchanged.
引用
收藏
页码：993 / 996
页数：4
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