Improvement of porous polysilicon nano-structured emitter for vacuum packaged devices

被引:3
|
作者
Lee, JW
Paek, KK
Jang, J
Ju, BK
机构
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
[2] Korea Inst Sci & Technol, Microsyst Res Ctr, Display & Nanodevices Lab, Seoul 136791, South Korea
[3] Daejin Univ, Dept Elect Engn, Pochon 487711, Gyeonggi Do, South Korea
[4] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
关键词
D O I
10.1007/s10854-005-6589-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Porous polysilicon (PPS) emitters were fabricated by depositing an Au thin film on a thermally oxidized polysilicon and their emission properties were examined. The emission properties were also measured for the emitters with various Au thicknesses and the vacuum packaged devices were then developed. The experimental results show that the electrical performances of PPS emitters decreased, because high-temperature packaging process will lead to thermally induced phenomenon between thin layers. We have carried out optimal-thickness variation in Au thickness to improve electron emission properties of PPS emitters packaged. When PPS emitters packaged was driven directly, the field-induced electron emission through anode phosphor was observed. (C) 2005 Springer Science + Business Media, Inc.
引用
收藏
页码:125 / 130
页数:6
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