Fabrication of nanostructured silicon surface using selective chemical etching

被引:4
|
作者
Sagyndykov, A. B. [1 ]
Kalkozova, Zh. K. [2 ]
Yar-Mukhamedova, G. Sh. [1 ]
Abdullin, Kh. A. [2 ]
机构
[1] Al Farabi Kazakh Natl Univ, Alma Ata 050000, Kazakhstan
[2] Al Farabi Kazakh Natl Univ, Natl Nanotechnol Open Lab, Alma Ata 050040, Kazakhstan
关键词
SOLAR-CELLS; EFFICIENCY; NANOWIRES;
D O I
10.1134/S106378421711024X
中图分类号
O59 [应用物理学];
学科分类号
摘要
A two-stage process based on selective chemical etching induced by metal nanoclusters is used to fabricate nanostructured surfaces of silicon plates with a relatively low reflectance. At silicon surfaces covered with silver nanoclusters, the SERS effect is observed for rhodamine concentrations of about 10(-12) M. At certain technological parameters, the depth of the nanostructured layer weakly depends on the conditions for the two-stage etching, in particular, etching time. Under otherwise equal conditions for etching, the rate of the formation of textured layer in the p-type silicon is two times greater than the formation rate in the n-type silicon.
引用
收藏
页码:1675 / 1678
页数:4
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