Wafer-Scale W-Band Power Amplifiers Using On-Chip Antennas

被引：12
|
作者：
Atesal, Yusuf A. [1 ]
Cetinoneri, Berke [1 ]
Alhalabi, Ramadan A. [1 ]
Rebeiz, Gabriel M. [1 ]
机构：
[1] Univ Calif San Diego, La Jolla, CA 92093 USA
来源：
2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM | 2010年
关键词：
Millimeter-wave integrated circuits; power amplifier (PA); silicon germanium (SiGe) HBT; W-band;
D O I：
10.1109/RFIC.2010.5477386
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents, for the first time, a W-band SiGe power amplifier designed and fabricated together with a high-efficiency on-chip microstrip antenna. The antenna/amplifier results in an effective radiated power (ERP=P(t)G(t)) > 10 dBm from 88 to 98 GHz, with a peak of 14.6 dBm at 92 GHz. The chip consumes 120 mA from a 1.7 V supply. The antenna/amplifier approach can be extended to a large number of elements (8x8) and allows for efficient wafer-scale power combining and phased-array scanning.
引用
收藏
页码：469 / 472
页数：4
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