A Millimeter-Wave Dual-Band Class-F Power Amplifier in 90 nm CMOS

被引：0
|
作者：
Huang, Zhi-Jia [1 ]
Fu, Zi-Hao
Huang, Bo-Wei
Lin, Yu-Ting
Kao, Kun-Yao
Lin, Kun-You
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
来源：
2020 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2020年
关键词：
power amplifiers; millimeter wave integrated circuits; CMOS process; 5G mobile communication; EFFICIENCY;
D O I：
10.1109/rfit49453.2020.9226200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 28/38 GHz dual-band class-F power amplifier (PA) using 90-nm CMOS process is proposed. The efficiency of the two-stage PA is enhanced by the proposed dual-band class-F output matching network, in which the harmonic impedance of both bands is controlled to fulfill the voltage and current waveform for class-F operation. The proposed PA achieves a measured small-signal gain of 20.5 and 14.6 dB, saturation output power (P-sat) of 15.5 and 13.1 dBm, peak power-added efficiency (PAE) of 27.2 and 16.4%, output 1-dB compression power (OP1dB) of 13.9 and 11.4 dBm at 28 and 38 GHz, respectively.
引用
收藏
页码：70 / 72
页数：3
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