Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate

被引：16

作者：

Xu, Jun ^{[1
]}

Chen, Li

Yu, Lisheng

Liang, H.

Zhang, B. S.

Lau, Kei May

机构：

[1] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[3] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Ctr Photon Technol, Kowloon, Hong Kong, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2007年 / 36卷 / 09期

关键词：

D O I：

10.1007/s11664-007-0193-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Crack-free InGaN/GaN quantum-well (QW) light-emitting diode (LED) structures were grown on a patterned Si substrate. Spatially resolved cathodoluminescence was studied on these LED wafers. Cathodoluminescence (CL) emission spectra at room temperature and low temperature (82 K) were measured. A main LED peak (similar to 2.7 eV) and an additional peak (similar to 3.1 eV) in the emission spectra at 82 K were observed. Using CL spectra mapping measurements on a cross section of the sample, it can be clearly seen that the similar to 3.1 eV emission comes from the interfacial layer between the p-AlGaN and the QWs. This observation was further verified by comparing spectra of specific points on the cross section by line scanning. The origin of such emission is discussed. Cathodoluminescence images, emission spectra, and x-ray energy dispersion spectra (EDS) showed that the In composition at a specific corner of the mesa was higher than that in the rest of the mesa. Such macroscopic inhomogeneity might be caused by gas dynamics on the patterned substrate.

引用

页码：1144 / 1148

页数：5

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