Contacts for High-Resistivity (Cd,Mn)Te Crystals

被引：11
|
作者：
Witkowska-Baran, M. [1 ]
Mycielski, A. [1 ]
Kochanowska, D. [1 ]
Szadkowski, A. J. [1 ]
Jakiela, R. [1 ]
Witkowska, B. [1 ]
Kaliszek, W. [1 ]
Domagala, J. [1 ]
Lusakowska, E. [1 ]
Domukhovski, V. [1 ]
Dybko, K. [1 ]
Cui, Y. [2 ]
James, R. B. [2 ]
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Brookhaven Natl Lab, Upton, NY 11973 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 01期
关键词：
Amorphous materials; contact resistance; gamma ray detectors; ohmic contacts; X-ray detectors; CADMIUM ZINC TELLURIDE; CDZNTE DETECTORS; SURFACES; CDTE; RAY;
D O I：
10.1109/TNS.2010.2100827
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semi-insulating (Cd,Mn)Te crystals offer a material that may compete well with the commonly used (Cd,Zn)Te crystals for manufacturing large-area X-and gamma-ray detectors [1]. The Bridgman growth method yields good quality, high-resistivity (10(9) - 10(10) Omega . cm) crystals of (Cd, Mn) Te: V. Doping the as-grown crystals with the compensating agent vanadium (approximate to 10(16) cm(-3)) ensures their high resistivity; thereafter, annealing them in cadmium vapors reduces the number of cadmium vacancies. Applying the crystals as detectors necessitates having satisfactory electrical contacts. Accordingly, we explored various techniques of ensuring good electrical contacts to these semi-insulating (Cd, Mn) Te crystals, assessing metallic layers, monocrystalline semiconductor layers, and amorphous (or nanocrystalline) semiconductor layers. We found that ZnTe heavily doped (approximate to 10(18) cm(-3)) with Sb, and CdTe heavily doped (approximate to 10(17) cm(-3)) with In, proved satisfactory semiconductor contact layers. They subsequently enabled us to establish good contacts (with only narrow tunneling barriers) to the Au layer that usually constitutes the most external contact layer. We outline our technology of applying electrical contacts to semi-insulating (Cd, Mn) Te, and describe some important properties.
引用
收藏
页码：347 / 353
页数：7
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