Gain Properties of InGaN Quantum Wells with AlGaInN Barriers

被引：0
|
作者：
Fu, Hanlin [1 ]
Sun, Wei [1 ]
Ogidi-Ekoko, Onoriode [1 ]
Tansu, Nelson [1 ]
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Photon & Nanoelect, Bethlehem, PA 18015 USA
来源：
2018 IEEE PHOTONICS CONFERENCE (IPC) | 2018年
基金：
美国国家科学基金会;
关键词：
LIGHT-EMITTING-DIODES; ENHANCEMENT; EFFICIENCY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The material gain properties of the InGaN quantum well (QW) with various AIInGaN barriers are studied through self-consistent k.p formalism. Our study shows that the InGaN QW with lattice-matched AlGaInN barriers achieves remarkable improvement over conventional InGaN QW.
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页数：2
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