Selective-area epitaxy and in-situ etching of GaAs using tris-dimethylaminoarsenic by chemical beam epitaxy

被引：3
|
作者：
Li, NY [1 ]
Tu, CW [1 ]
机构：
[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093
来源：
COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS | 1996年 / 421卷
关键词：
D O I：
10.1557/PROC-421-15
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：15 / 20
页数：6
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