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- [3] CHEMICAL BEAM EPITAXY AND LASER-MODIFIED CHEMICAL BEAM EPITAXY OF INGAAS USING TRIS-DIMETHYLAMINOARSENICJOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (07) : 827 - 832DONG, HKLI, NYTU, CW
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- [5] In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenicAPPLIED PHYSICS LETTERS, 1997, 70 (19) : 2589 - 2591Li, NYHsin, YMBi, WGAsbeck, PMTu, CW
- [6] GROWTH OF GAAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIS-DIMETHYLAMINOARSENICAPPLIED PHYSICS LETTERS, 1992, 60 (19) : 2421 - 2423ABERNATHY, CRWISK, PWBOHLING, DAMUHR, GT
- [8] CHEMICAL BEAM EPITAXY OF INGAAS/GAAS MULTIPLE-QUANTUM WELLS USING CRACKED OR UNCRACKED TRIS-DIMETHYLAMINOARSENICCOMPOUND SEMICONDUCTORS 1994, 1995, (141): : 69 - 74DONG, HKLI, NYTU, CW
- [9] An evaluation of alternative precursors in chemical beam epitaxy: tris-dimethylaminoarsenic, tris-dimethylaminophosphorus, and tertiarybutylphosphineJOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) : 112 - 116Li, NYDong, HKWong, WSTu, CW
- [10] SELECTIVE-AREA EPITAXY OF GAAS USING A GAN MASK IN IN-SITU PROCESSESJOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 37 - 41YOSHIDA, SSASAKI, MKAWANISHI, H