InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure

被引：28

作者：

Kawaguchi, Kenichi ^{[1
,2
]}

Heurlin, Magnus ^{[1
]}

Lindgren, David ^{[1
]}

Borgstrom, Magnus T. ^{[1
]}

Ek, Martin ^{[1
]}

Samuelson, Lars ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 13期

基金：

瑞典研究理事会;

关键词：

III-V semiconductors; indium compounds; MOCVD; photoluminescence; semiconductor growth; semiconductor quantum dots; semiconductor quantum wells; stacking faults; vapour phase epitaxial growth; VAPOR-PHASE EPITAXY; SELF-ASSEMBLED INAS; NANOSTRUCTURES; SUPERLATTICES; INP(001);

D O I：

10.1063/1.3646386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heteroepitaxial growth of InAs was investigated on sidewalls of InP nanowires (NWs) using metal-organic vapor phase epitaxy. InAs quantum wells (QWs) with smooth surface were formed on the InP NWs having perfect wurtzite phase structure. On the other hand, InAs quantum dots (QDs) were formed on wurtzite InP NWs purposely introduced with stacking-fault segments. Photoluminescence from single NWs attributed to both QWs and QDs was observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646386]

引用

页数：3

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