Multijunction GaInP/GaInAs/Ge Solar Cells with Bragg Reflectors

被引：19

作者：

Emelyanov, V. M. ^{[1
]}

Kalyuzhniy, N. A. ^{[1
]}

Mintairov, S. A. ^{[1
]}

Shvarts, M. Z. ^{[1
]}

Lantratov, V. M. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

IRRADIATION;

D O I：

10.1134/S1063782610120122

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Effect of subcell parameters on the efficiency of GaInP/Ga(In) As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10(15) cm(-2) has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

引用

页码：1600 / 1605

页数：6

共 50 条

[21] Increasing the Photocurrent of a Ga(In)As Subcell in Multijunction Solar Cells Based on GaInP/Ga(In)As/Ge Heterostructure
Mintairov, S. A.
Emel'yanov, V. M.
Kalyuzhnyi, N. A.
Shvarts, M. Z.
Andreev, V. M.
TECHNICAL PHYSICS LETTERS, 2019, 45 (12) : 1258 - 1261
[22] Progress toward technology transition of GaInP2/GaAs/Ge multijunction solar cells
Keener, DN
Marvin, DC
Brinker, DJ
Curtis, HB
Price, PM
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 787 - 792
[23] Increasing the Photocurrent of a Ga(In)As Subcell in Multijunction Solar Cells Based on GaInP/Ga(In)As/Ge Heterostructure
S. A. Mintairov
V. M. Emel’yanov
N. A. Kalyuzhnyi
M. Z. Shvarts
V. M. Andreev
Technical Physics Letters, 2019, 45 : 1258 - 1261
[24] High efficiency, multijunction GaInP/GaAs solar cells
Olson, JM
Kurtz, SR
Friedman, DJ
Bertness, K
COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 419 - 424
[25] Plasmachemical and Wet Etching in the Postgrowth Technology of Solar Cells Based on the GaInP/GaInAs/Ge Heterostructure
Malevskaya, A., V
Zadiranov, Yu M.
Malevskii, D. A.
Pokrovskii, P., V
Il'inskaya, N. D.
Andreev, V. M.
TECHNICAL PHYSICS LETTERS, 2021, 47 (02) : 114 - 117
[26] METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY
Dimroth, F.
Guter, W.
Schoene, J.
Welser, E.
Steiner, M.
Oliva, E.
Wekkeli, A.
Siefer, G.
Philipps, S. P.
Bett, A. W.
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 1933 - 1937
[27] Plasmachemical and Wet Etching in the Postgrowth Technology of Solar Cells Based on the GaInP/GaInAs/Ge Heterostructure
A. V. Malevskaya
Yu. M. Zadiranov
D. A. Malevskii
P. V. Pokrovskii
N. D. Il’inskaya
V. M. Andreev
Technical Physics Letters, 2021, 47 : 114 - 117
[28] Spectral Correction of CPV Modules Equipped with GaInP/GaInAs/Ge Solar Cells and Fresnel Lenses
Theristis, Marios
Fernandez, Eduardo F.
Almonacid, Florencia
Georghiou, George E.
APPLIED SCIENCES-BASEL, 2017, 7 (08):
[29] Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells
Aierken, A.
Fang, L.
Heini, M.
Zhang, Q. M.
Li, Z. H.
Zhao, X. F.
Sailai, M.
Liu, H. T.
Guo, Q.
Gao, W.
Gao, H.
Sun, Q.
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 185 : 36 - 44
[30] Modeling of GaInP/GaAs/Ge and the inverted-grown metamorphic GaInP/GaAs/GaInAs triple-junction solar cells
Xiao, Y. G.
Li, Z. Q.
Li, Z. M. Simon
HIGH AND LOW CONCENTRATION FOR SOLAR ELECTRIC APPLICATIONS III, 2008, 7043

← 1 2 3 4 5 →