A coupled circuit and device simulator for design of RF MEMS VCOs

被引：0

作者：

Behera, M ^{[1
]}

De, S ^{[1
]}

Aluru, N ^{[1
]}

Mayaram, K ^{[1
]}

机构：

[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA

来源：

2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS | 2003年

关键词：

coupled circuit and device simulation; electrostatic/mechanical simulator; MEMS capacitor; MEMS VCO;

D O I：

暂无

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

A new coupled circuit and electrostatic/mechanical simulator is presented for the design of RF MEMS VCOs. The numerical solution of device level equations is used to accurately compute the capacitance of the MEMS capacitor. This coupled with a circuit simulator facilitates the simulation of circuits incorporating MEMS capacitors. Simulations of a 2.4 GHz VCO implemented in a UP 0.5-mum CMOS technology show good agreement with experimentally observed behavior.

引用

页码：347 / 350

页数：4

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