Time-of-flight 3-D imaging pixel structures in standard CMOS processes

被引：10

作者：

Durini, Daniel ^{[1
,2
]}

Brockherde, Werner

Ulfig, Wiebke

Hosticka, Bedrich J.

机构：

[1] Fraunhofer Inst Microelect Circuits & Syst, Photodetector Arrays Grp, D-47057 Duisburg, Germany

[2] Univ Duisburg Essen, D-47057 Duisburg, Germany

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2008年 / 43卷 / 07期

关键词：

charge-coupling; charge-injection photogate; correlated-double-sampling CDS; high-speed NIR imaging; photodiode based pixels; pixel noise; range finder; SNR; standard CMOS processes; 3-D imaging; time-compression amplification; time-of-flight;

D O I：

10.1109/JSSC.2008.922397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this investigation we examine different pixel structures and readout principles to be used in imagers fabricated in standard CMOS processes, for example, the 0.5 mu m and 0.35 mu m processes available at the Fraunhofer IMS. The targeted applications are high-speed near-infra-red (NIR) 3-D imaging based on time-of-ftight (TOF) measurements. We discuss various issues ranging from charge-coupling possibilities to noise, spectral responsivity and fill-factor, and present an extensive study of pixel configurations based on inverse biased p-n junction and MOS-C based photodetectors. We also discuss the possibilities of using a novel CMOS imaging pixel for TOF imaging applications: the charge-injection photogate (CI-PG) which presents parametric time-compression amplification. Finally, we compare and discuss all the pixel configurations examined.

引用

页码：1594 / 1602

页数：9

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