Growth of free-standing non-polar GaN on (100) γ-LiAlO2 substrates by hydride vapor phase epitaxy

被引：4

作者：

Chou, Mitch M. C. ^{[1
]}

Hang, D. R. ^{[1
]}

Chen, Chenlong ^{[1
]}

Li, Chu-An ^{[1
]}

Lu, Jin-Wei ^{[1
]}

Lee, Chun-Yu ^{[1
]}

Tsay, Jenq-Dar ^{[2
]}

Hsu, Chuck W. C. ^{[3
]}

Liu, Calvin ^{[3
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat Sci & Optoelect Engn, Kaohsiung 80424, Taiwan

[2] Ind Technol Res Inst, Opt Elect Res Lab, Hsinchu, Taiwan

[3] Sino American Silicon Prod Inc, Hsinchu, Taiwan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

GaN; VPE; morphology; structure; defect levels; photoluminescence; PLANE; DIODES; FILMS;

D O I：

10.1002/pssc.200983585

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nonpolar free-standing m-plane GaN substrates were fabricated by hydride vapor phase epitaxy on (100) gamma-LiAlO2 substrates. The surface morphlogies were characterized by conventional optical microscopy. Structural properties of the GaN epilayers are investigated by X-ray diffraction. Optical properties examined by photoluminescence spectroscopy exhibited a strong and sharp near near-band-edge emission peak at 3.43 eV, as well as a defect-related yellow emission. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

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