Single photon detection in the long wave infrared

被引：0
|
作者：
Ueda, T. [1 ]
An, Z. [1 ]
Hirakawa, K. [2 ]
Komiyama, S. [1 ]
机构：
[1] Univ Tokyo, Dept Basic Sci, Meguro Ku, Komaba 3-8-1, Tokyo 1538902, Japan
[2] Univ Tokyo, Inst Ind Sci, 4-6-1 Komaba, Tokyo 153, Japan
来源：
NARROW GAP SEMICONDUCTORS 2007 | 2008年 / 119卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We developed a novel single-photon detector in the long wave infrared (LWIR) spectral region. The detector is a charge-sensitive infrared phototransistor (CSIP) fabricated in a GaAs/AlGaAs double quantum well (QW) structure, in which a photo-generated hole (+e) in the floating gate (upper QW) modulates the capacitivelycoupled conductance of the underneath channel (lower QW). The high responsivity (R=4x10(6) A/W) and specific detectivity (D*=1x10(15) cmHz(1/2)/W) are achieved. The dynamic range is extended beyond 10(7) (similar to aW to pW) by repeatedly resetting the accumulated holes in the upper QW. The simple structure is feasible for detector array fabrication.
引用
收藏
页码：171 / +
页数：2
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