An FBAR/CMOS Frequency/Phase Discriminator and Phase Noise Reduction System

被引:14
|
作者
Imani, Alireza [1 ]
Hashemi, Hossein [1 ]
机构
[1] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA
关键词
Bulk acoustic wave; CMOS; frequency locking; oscillator; phase noise; phase noise reduction; LASER PHASE; OSCILLATORS; STABILIZATION; RESONATOR;
D O I
10.1109/TMTT.2015.2416239
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A phase noise reduction scheme using a sensitive resonator-based low-noise phase-frequency discriminator is presented in this paper. The discriminator uses a high quality factor thin film bulk acoustic resonator in a notch filter configuration with common-mode traps to reduce the low-frequency noise up-conversion. The phase noise reduction scheme comprises of a main feedback loop to lock a voltage-controlled oscillator to the discriminator and another loop to adjust the depth of the notch. Two chips were fabricated in 0.13-m CMOS technology integrating the discriminator and the phase noise reduction schemes, respectively. The 1.5-GHz discriminator shows phase noise floor of -128 dBc/Hz at 20 kHz, -142 dBc/Hz at 100 kHz, -162 dBc/Hz at 1 MHz, and -166 dBc/Hz at 4 MHz, while consuming 26 mW of power. The measured phase noise of the feedback reduction circuitry reaches the phase noise floor of the discriminator within the loop bandwidth, as expected.
引用
收藏
页码:1658 / 1665
页数:8
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