Advances in piezoelectric PZT-based RF MEMS components and systems

被引:22
|
作者
Benoit, R. R. [1 ]
Rudy, R. Q. [1 ]
Pulskamp, J. S. [1 ]
Polcawich, R. G. [1 ]
Bedair, S. S. [1 ]
机构
[1] US Army, Res Lab, Sensors & Elect Devices Directorate, 2800 Powder Mill Rd, Adelphi, MD 20783 USA
关键词
piezoelectric; PZT; RF MEMS; THIN-FILMS; PB(ZR; TI)O-3; SWITCHES; MODES; MOCVD;
D O I
10.1088/1361-6439/aa710b
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
There is continuing interest in radio frequency (RF) microelectromechanical system (MEMS) devices due to their ability to offer exceptional RF performance, high linearity and low power consumption. To date, there is an impressive amount of RF MEMS components such as; switches, resonators, varactors, and tunable inductors that have enabled smaller, cheaper and more efficient RF systems. RF MEMS devices contain micromachined components that have the ability to move so that a change in the mechanical state of a device will result in a change to the device's RF properties. There are many common modes of actuation, including, but not limited to: electrostatic, magnetostatic, piezoelectric, and electrothermal actuation. Although there are attractive aspects and drawbacks to each of these technologies, this paper will focus on advances in the application of piezoelectric actuation, and in particular the use of lead zirconium titanate (PZT), for RF MEMS.
引用
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页数:13
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