Ultrafast pulse generation in semiconductor lasers

被引：0
|
作者：
Sorel, Marc [1 ]
Strain, Michael J. [2 ]
机构：
[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland
[2] Univ Strathclyde, Dept Physcis, Inst Photon, Glasgow G1 1RD, Lanark, Scotland
来源：
2015 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS) | 2015年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Integrated semiconductor laser devices are presented as extremely compact generators of ultra-short pulse trains. Control is demonstrated on a wide range of emission parameters including wavelength, pulse duration, repetition rate and emitted power. All device geometries require simple drive electronics, consisting of only constant current injection and reverse bias voltage control.
引用
收藏
页码：193 / 195
页数：3
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